LAP Lambert Academic Publishing ( 16.11.2010 )
€ 49,00
Si-based microelectronic community is experiencing a sort of revolution, in order to meet the scaling rate demanded by high-tech industries. Shallow p-type junctions with high active dopant concentrations are needed. The F capability in helping the B confinement in Si is widely recognized, even if there is not a general consensus on the physical mechanisms acting. Different mechanisms have been proposed: a chemical bonding between F and B; or a F interaction with point defects, through the formation of F-I (interstitial) or F-V (vacancy) complexes. This thesis investigates the F behaviour in pre-amorphized Si, opening a new route towards the F profile engineering. F is shown to strongly modify Is and Vs population, inducing an Is undersaturation or a Vs supersaturation. Such effect is transient, because strictly correlated to the transient presence of F in the Si samples. Our results allow a point defect engineering by means of F, ruling out the F-B chemical bonding as the responsible for B diffusion reduction by F, and suggesting the F-V bonding as the key mechanism governing the F behaviour in pre-amorphized Si and its capability in controlling the point defect population.
Kitap detayları: |
|
ISBN-13: |
978-3-8433-7408-8 |
ISBN-10: |
3843374082 |
EAN: |
9783843374088 |
Kitabın dili: |
English |
Yazar: |
Giuliana Impellizzeri |
Sayfa sayısı: |
120 |
Yayın tarihi: |
16.11.2010 |
Kategori: |
Fizik, astronomi |