Microelectromechanical Devices

Silicon carbide (SiC) is a promising material for micro-electromechanical systems (MEMS) due to its mechanical and electrical advantages over well-known silicon MEMS. This work is part of a project sponsored by EPSRC in co-operation with Newcastle University, Edinburgh University, and the Scottish Microelectronic Centre (UK) and CWRU (USA). The book highlights relevant previous work in SiC MEMS and presents a model for SiC resonators, Fabrication and characterisation of SiC resonators. ANSYS (FEA tool) was used as a modeling tool. The book also presents high temperature measurements using electrostatically actuated SiC device which was fabricated for this purpose. Results obtained from frequency measurements at high temperatures are used to calculate the Young’s modulus temperature coefficient for 3C-SiC. Final chapters of the book focuses on the design, fabrication, and testing of a electrothermal SiC actuator. Further analysis is subsequently carried out to model the electrothermal actuator. The book also shows experimentally the potential of using electrothermal and electrostatic SiC devices for signals multiplication (RF MEMS).