LAP Lambert Academic Publishing ( 2012-01-04 )
€ 49,00
Semiconductor devices are generally analyzed with relatively simple equations or with detailed computer simulations. Most text-books use these simple equations and show device diagrams that are frequently very simplified and occasionally incorrect. For example, the carrier densities near the pinch-off point in MOSFETs and JFETs and the minority carrier density in the base near the reverse-biased base-collector junction are frequently assumed to be zero or near zero. Also the channel thickness at the pinch-off point is often shown to approach zero. None of these assumptions can be correct. The research in this book addresses these points. These simulation results in this book provide a more complete understanding of device physics and device operation in those regions usually not addressed in semiconductor device physics books.
Book Details: |
|
ISBN-13: |
978-3-8473-2345-7 |
ISBN-10: |
3847323458 |
EAN: |
9783847323457 |
Book language: |
English |
By (author) : |
Xuan Yang |
Number of pages: |
100 |
Published on: |
2012-01-04 |
Category: |
Electronics, electro-technology, communications technology |