Modeling and Characterization of GaN Based Hemts

The world of solid state device in semiconductor industries is achieving significant advancement in the recent years and is rapidly changing with the introduction of devices fabricated using semiconductor alloys. III–V compound semiconductor alloys are promising choice for channel material of future post-Si CMOS logic transistors. In the quest to map the potential of III-V compound semiconductor alloys for future CMOS applications, the High Electron Mobility Transistor (HEMT) has emerged as a valuable model system to understand fundamental physical and technological aspects of the device.