Stability of IGZO-based Thin-Film Transistor

Stability of IGZO-based Thin-Film Transistor

Stability and Temperature-Dependence Assessment of IGZO TFTs

LAP Lambert Academic Publishing ( 2010-09-07 )

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Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this book is to provide detailed assessments of device stability, temperature dependence, and related phenomena for IGZO- based TFTs processed at temperatures between 200 °C and 300 °C.

Book Details:

ISBN-13:

978-3-8383-9963-8

ISBN-10:

3838399633

EAN:

9783838399638

Book language:

English

By (author) :

Ken Hoshino
John Wager

Number of pages:

152

Published on:

2010-09-07

Category:

Electronics, electro-technology, communications technology