Study of Photoluminescence and Magnetoresistance of Bi Doped CdSe Thin

The phenomenal rise in thin film researches is due to their extensive applications in diverse fields of electronics, optics, space science, aircraft’s, defense and other industries. Most electronic device structures are composed of layers of metals, semiconductors and insulators. For the formation of electronic and optoelectronic devices, the II – V – VI semiconductors are a significantly more important than the I – III semiconductors. Bi – containing semiconductor materials such as Cd1-xBixSe alloys are expected to be a key component of photo sensor and magneto resistance semiconductor materials. The book entitled “Study of Photoluminescence and Magneto resistance of Bi doped CdSe Thin Films” consist of measurement of structural, electrical, thermo electrical and optical properties of bismuth doped CdSe films deposited on glass substrate over thickness range of 1000 – 3000 Ǻ by thermal evaporation technique. The properties measured are resistivity, Hall measurement, magneto resistance, thermo electric power measurement, I-V characteristics, optical band gap, structural properties and photo luminescent properties at room temperature.