MBE Growth and Characterization of SiGe Nanoislands

SiGe nanoislands have been grown by Molecular Beam Epitaxy (MBE) on Si (100) substrates with various layer designs and growth conditions. Multilayered thin films of these structures with different thicknesses were fabricated by changing the substrate temperature, Ge content, annealing temperature and annealing duration. Structural properties of the surfaces were examined by Reflection High Energy Electron Diffraction (RHEED), Grazing Angle X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). The optical investigation was acquired by Dispersive Raman Spectroscopy and the electrical characterization was performed by Semiconductor Analysis method. It has been observed that the surface morphology of the nanostructures can be tuned by changing their layer designs and growth parameters.