Structural properties of luminescent nitride semiconductors

Structural properties of luminescent nitride semiconductors

This book presents the results of structural and spectroscopic studies of luminescent nitride semiconductors

LAP Lambert Academic Publishing ( 13.09.2010 )

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This book presents the results of structural studies of InGaN, AlGaN, InAlN, and rare-earth doped (Tm, Er and Eu) GaN by Extended X-ray Absorption Fine Structure; optical characterisation of RE-doped GaN by cathodoluminescence, photoluminescence and photoluminescence excitation spectroscopies. First attempts to identify the lattice location of emitting centres in nitride semiconductors using X-ray Excited Optical Luminescence for EXAFS detection are also presented.

Детали книги:

ISBN-13:

978-3-8383-2333-6

ISBN-10:

3838323335

EAN:

9783838323336

Язык книги:

English

By (author) :

Vyacheslav Kachkanov

Количество страниц:

176

Опубликовано:

13.09.2010

Категория:

Физика, астрономия