LAP Lambert Academic Publishing ( 04.01.2012 )
€ 49,00
Semiconductor devices are generally analyzed with relatively simple equations or with detailed computer simulations. Most text-books use these simple equations and show device diagrams that are frequently very simplified and occasionally incorrect. For example, the carrier densities near the pinch-off point in MOSFETs and JFETs and the minority carrier density in the base near the reverse-biased base-collector junction are frequently assumed to be zero or near zero. Also the channel thickness at the pinch-off point is often shown to approach zero. None of these assumptions can be correct. The research in this book addresses these points. These simulation results in this book provide a more complete understanding of device physics and device operation in those regions usually not addressed in semiconductor device physics books.
Kitap detayları: |
|
ISBN-13: |
978-3-8473-2345-7 |
ISBN-10: |
3847323458 |
EAN: |
9783847323457 |
Kitabın dili: |
English |
Yazar: |
Xuan Yang |
Sayfa sayısı: |
100 |
Yayın tarihi: |
04.01.2012 |
Kategori: |
Elektronik, elektrik ve haberleşme teknolojileri |